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  4. Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
 
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1986
Conference Paper
Title

Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy

Author(s)
Miguel, J.L. de
Ohmori, Y.
Stolz, W.
Tapfer, L.
Ploog, K.
Wagner, J.
Mainwork
Gallium arsenide and related compounds 1985. Proceedings  
Conference
International Symposium on Gallium Arsenide and Related Compounds 1985  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • Halbleiter

  • quantum wells

  • Übergang(excitonisch)

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