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Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
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1986
Conference Paper
Title
Excitonic transitions in quantum wells composed of either binary or ternary III-V semiconductors grown by molecular beam epitaxy
Author(s)
Miguel, J.L. de
Ohmori, Y.
Stolz, W.
Tapfer, L.
Ploog, K.
Wagner, J.
Mainwork
Gallium arsenide and related compounds 1985. Proceedings
Conference
International Symposium on Gallium Arsenide and Related Compounds 1985
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
Halbleiter
quantum wells
Übergang(excitonisch)