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Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type delta-doped GaAs-Be/AlxGa1-xAs double-heterostructures.

Exzitonische Verstärkung der Fermi-Kanten-Singularität und Rekombinationskinetik photoerzeugter Elektronen in p-Typ delta-dotierten GaAs-Be/AlxGa1-xAs Doppelheterostrukturen


Solid-State Electronics 37 (1994), Nr.4-6, S.871-875 : Abb.,Lit.
ISSN: 0038-1101
Fraunhofer IAF ()
Fermi edge singularity; Fermi-Kanten-Singularität; III-V semiconductors; photoluminescence; Photolumineszenz; recombination kinetics; Rekombinationskinetik

We have studied the photoluminescence (PL) spectrum, and the strength of the Fermi edge singularity (FES) in that spectrum, of the two-dimensional hole gas (2DHG) formed in GaAs/AlsubxGasub1-xAs double-heterostructures as a function of the width of the GaAs layer, the centre of which is p-type delta-doped. A variation of that layer width allows us to tune, for a fixed doping concentration, the energetic spacings between the hole subbands. From these experiments, we conclude that the observation of a FES in the PL spectrum of a 2DHG is brought about by a resonant hybridization between occupied states close to the hole Fermi energy and exciton levels involving nearby lying unoccupied hole subbands. The recombination and spin-flip scattering times of the photogenerated electrons are found to decrease drastically with decreasing GaAs layer width which reflects the increase in the electron-hole wavefunction overlap.