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ESD protection elements during HBM stress tests - further numerical and experimental results

 
: Russ, C.; Gieser, H.; Verhaege, K.

Brydon, G.M.:
ESREF '94. Proceedings of the European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Glasgow, 1994
S.457-466
European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) <5, 1994, Glasgow>
Englisch
Konferenzbeitrag
Fraunhofer IFT; 2000 dem IZM eingegliedert
circuit simulation; ESD; ESD HBM tester parasitics; HBM; modelling; protection element; test board capacitance; transmission line

Abstract
Correlation problems for HBM-ESD testing result from the complex interaction between device and tester. The HBM stress of different wellcharacterized testers is applied to protection elements. By means of circuit simulations and insitu measurements, snapback and second breakdown during HBM are investigated. For fast transient events, a new transmission line approach of the tester improves the correlation between experiment and simulation.

: http://publica.fraunhofer.de/dokumente/PX-13133.html