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Erbium doping of molecular beam epitaxial GaAs

: Smith, R.S.; Müller, H.D.; Wennekers, P.; Maier, M.; Ennen, H.


Applied Physics Letters 50 (1987), Nr.1, S.49-51 : Abb.,Lit.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
Fraunhofer IAF ()
Erbium; Molekularstrahlepitaxie; Photolumineszenz; Seltene Erden

The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2x10E19 cm-3 has been successfully demonstrated. Up to a concentration of about 5x10E18 cm-3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature. (IAF)