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Epitaxial lead chalcogenide IR sensors on Si for 3-5 and 8-12 mu m

Epitaktisch hergestellte Chalkogenid-IR-Sensoren auf Si für die Bänder 3-5 und 8-12 Mikrometer


Semiconductor Science and Technology 5 (1990), Nr.3S, S.S49-S52
ISSN: 0268-1242
ISSN: 1361-6641
International Conference on Narrow Gap Semiconductors and Related Materials <1989, Gaithersburg/Md.>
Fraunhofer IPM ()
Fotodiode; Heteroepitaxie; heteroepitaxy; infrared detector; Infrarot Detektor; IV-VI-Halbleiter; IV-VI semiconductor; photo diode

Epitaxial IV-VI lead chalcogenide layers are grown on Si substrates with the aid of MBE-deposited stacked BaF2-CaF2 buffer films. The epitaxial buffer helps to overcome the large lattice and thermal expansion mismatch between IV-VIs and Si. Linear arrays of photovoltaic IR sensors fabricated in these layers cover cut-off wavelengths ranging from 3 fm (PbS and PbEuSe) to 5.7 fm (PbTe), and up to (cut-off wavelengths of the sensors) of PbSnSe-on-Si is smaller than in the bulk. This is explained by residual mechanical strain in the layers at cryogenic temperatures, while most of the strain due to the thermal expansion mismatch is relaxed at room temperature.