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Title
Ellipsometer zur in-situ-Schichtdickenmessung
Date Issued
1992
Author(s)
Berger, R.
Ryssel, H.
Schneider, C.
Aderhold, W.
Patent No
1990-4013211
Abstract
An ellipsometer, which is in particular destined for the measurement of the oxide layer thickness on silicon wafers inside a furnace, comprises an analyzing unit, a beam bending device, a paddle and a polarizing unit. In order to increase the measurement accuracy, the ellipsometer is designed in such a way that the beam bending device has two prisms, the analyzing unit and the polarization unit are arranged about the paddle and that two tubes are provided for guiding the beam from the polarization unit to the first prism and from the second prism to the analyzing unit.
Language
de
Patenprio
DE 1990-4013211 A: 19900425