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1987
Conference Paper
Titel
Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Abstract
Ga-rich p-type GaAs has been studied by electronic Raman scattering (ERS) using sub bandgap excitation. Electronic scattering from both levels of the 78 meV/203 meV double acceptor is observed, depending on the position of the Fermi level. The assignment of the Raman lines is confirmed by Fourier transform ir spectroscopy performed on the same samples. (IAF)
Language
English
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