Options
1993
Conference Paper
Titel
Electronic and optical properties of low-dimensional semiconductor structures
Alternative
Elektronische und optische Eigenschaften niederdimensionaler Halbleiterstrukturen
Abstract
This paper reviews the use of photoluminescence and photoluminescence excitation spectroscopy for the study of low-dimensional electron and hole gases in modulation- and delta-doped semiconductor heterostructures. This type of spectroscopy provides information on the subband structure and band filling in those structures. In addition, insight is gained in electron-hole many-body interactions, such as the so- called Fermi edge singularity, and in the electron- hole interaction strength. The latter information can be extracted from, e.g., the optical measurement of electron spin relaxation kinetics. Selected examples, mainly based on GaAs/AlxGa1-xAs heterostructures, will be discussed.