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Electronic and optical properties of low-dimensional semiconductor structures

Elektronische und optische Eigenschaften niederdimensionaler Halbleiterstrukturen
: Wagner, J.


Tapfer, L.; Ploog, K.:
Physics and Technology of Semiconductor Quantum Devices. Proceedings
Berlin: Springer, 1993 (Lecture notes in physics 419)
ISBN: 3-540-56989-8
Physics and Technology of Semiconductor Quantum Devices <1992, Mesagne>
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; low-dimensional semiconductor structure; niederdimensionale Halbleiterstruktur; photoluminescence; Photolumineszenzspektroskopie

This paper reviews the use of photoluminescence and photoluminescence excitation spectroscopy for the study of low-dimensional electron and hole gases in modulation- and delta-doped semiconductor heterostructures. This type of spectroscopy provides information on the subband structure and band filling in those structures. In addition, insight is gained in electron-hole many-body interactions, such as the so- called Fermi edge singularity, and in the electron- hole interaction strength. The latter information can be extracted from, e.g., the optical measurement of electron spin relaxation kinetics. Selected examples, mainly based on GaAs/AlxGa1-xAs heterostructures, will be discussed.