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Electron spin resonance studies of transition metal deep level impurities in SiC.

Elektronenspinresonanz von tiefen Übergangs-Metall-Störstellen in SiC
 

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Materials Science and Engineering, B. Solid state materials for advanced technology 11 (1992), S.27-30 : Abb.,Lit.
ISSN: 0921-5107
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
electron spin resonance; Elektronenspinresonanz; silicon carbide; Siliziumkarbid; Titan-Stickstoff-Paar; titanium nitrogen pair

Abstract
By electron spin resonance (ESR) and photo-ESR, vanadium has been identified as an electrically amphoteric deep level impurity introducing both donor, Dhigh0/Dhighplus, and acceptor, Ahigh0/Ahighminus, states in the band gap of 4H- and 6H-SiC. The vanadium donor level in 6H-SiC has been located by photo-ESR near midgap, Esubv plus 1.6eV. Omnipresent titanium impurities were found to form complexes with nitrogen donors; the corresponding donor level of the (TiN) pair in 6H-SiC occurs at Esubc-0.6eV.

: http://publica.fraunhofer.de/dokumente/PX-11691.html