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Electron parametric resonance identification of the SbGa heteroantisite defect in GaAs:Sb

Identifizierung des SbGa Hetero-Antisite Defektes in GaAs/Sb mittels ESR
: Baeumler, M.; Schneider, J.; Mitchel, W.C.; Yu, P.W.; Kaufmann, U.


Physical Review. B 39 (1989), Nr.9, S.6253-6256 : Abb.,Tab.,Lit.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
ISSN: 2469-9950
Fraunhofer IAF ()
ESR; Hetero-Antisite Defekt; isovalente Dotierung; räumliche Homogenität; SbGa; si-GaAs

GaAs doped with antimony (Sb) to a level of 10 high 19 cm high minus 3 has been studied by electron paramagnetic resoncance (EPR). A new EPR spectrum has been discovered which is identified as the Sb sub Ga heteroantisite defect. The electronic structure of this defect is practically indentical whith that of the intrinsic-anion antisite devects in GaP, GaAs, and InP. The EPR results show that Sb can be incorporated as an electrically active defect and therefore is not a suitable isovalent dopant in the growth of low-dislocation-density semi-insulating GaAs.