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Electromagnetic radiation from hot carriers in FET-devices.

Elektromagnetische Strahlung heisser Ladungsträger in Feldeffekt-Transistoren
: Herzog, M.; Schels, M.; Koch, F.; Moglestue, C.; Rosenzweig, J.

Solid-State Electronics 32 (1989), Nr.12, S.1065-1069 : Abb.,Lit.
ISSN: 0038-1101
Fraunhofer IAF ()
electron energy distribution; Elektronenenergieverteilung; FET devices; heißes Elektron; heisse Elektronen; hot electrons; Lichtemission; light emission; Monte Carlo methods

We report on the emission of light from Si MOS and GaAs MES devices. Processes involving band-to-band transitions and a Bremsstrahlung-continuum below the bandgap are shown to exist. Spatially nonuniform emission from the MESFETs is observed. The GaAs results are compared with Monte Carlo simulations.