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Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field-effect transistors.

Elektrolumineszenz von Gunn Domänen in GaAs/AlGaAs Heterostruktur Feld-Effekt-Transistoren
: Moglestue, C.; Zappe, H.P.


Journal of applied physics 68 (1990), Nr.5, S.2501-2503 : Abb.,Lit.
ISSN: 0021-8979
ISSN: 1089-7550
Fraunhofer IAF ()
electroluminescence; Elektrolumineszenz; Gunn domains; Gunn Domänen; heißes Elektron; high field effect; Hoch-Feld-Effekte; hot electrons; impact ionisation; Lichtemission; light emission; Stoßionisation

Electroluminescence from the drain-edge of GaAs/AlGaAs heterostructure metalsemiconductor field-effect transistors under high applied drain bias is observed. The visible light emission is seen through Monte Carlo simulations to be correlated with Gunn domains in the sample, in which the high-field region gives rise to both impact ionization current and the luminescent emission.