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Electrical properties of silicon carbide polytypes

Elektrische Eigenschaften von Siliziumkarbid-Polytypen
: Pensl, G.; Afanasev, V.V.; Bassler, M.; Schadt, M.; Troffer, T.; Heindl, J.; Strunk, H.P.; Maier, M.; Choyke, W.J.

Silicon carbide and related materials 1995. Proceedings
IOP Publishing, 1996 (Institute of Physics - Conference Series 142)
Conference on Silicon Carbide and Related Materials <5, 1995, Kyoto>
Fraunhofer IAF ()
ion implantation; Ionenimplantation; SiC; SIMS depth profiling; SIMS-Tiefenprofile

It is demonstrated that SiC can be doped with boron and aluminum by ion implantation. Based on our Hall effect data, an optimal electrical activity of these dopants is reached at annealing temperatures around 1700 deg C. The density of states at SiC/SiO2 interfaces is monitored. A model is proposed assuming carbon as an essential source for the interface states.