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The electrical characteristics of Pb1-xEuxSe homojunctions.

Elektrische Eigenschaften von PN-Übergängen in Pb1-xEuxSe
: Xu, J.; Halford, B.; Tacke, M.


Semiconductor Science and Technology 8 (1993), S.S360-S363 : Abb.,Tab.,Lit.
ISSN: 0268-1242
ISSN: 1361-6641
Fraunhofer IPM ()
electrical property; elektrische Eigenschaft; Halbleiter; IV-VI compound; IV-VI-Verbindung; semiconductor

The current mechanism of Pbsub1-xEusubxSe diodes prepared by the MBE techique was studied by measuring Rsub0A of diodes with five different europium contents as a function of temperature. Good agreement was obtained between theoretical results and experimental data at high temperatures. At low temperatures, Rsub0A is not dominated by band-to-band tunnelling, but by excess tunnelling. At present, we favour the explanation of trap-assisted tunnelling since Rsub0A is an exponential function of the energy gap. From the theoretical model, a minority carrier lifetime of the order of a nanosecond was derived.