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Electrical and optical properties of As and Li doped ZnSe films.

Elektrische und optische Eigenschaften von As und Li dotierten ZnSe-Filmen
: Hingerl, K.; Lilja, J.; Toivonen, M.; Pessa, M.; Jantsch, W.; As, D.J.; Rothemund, W.; Juza, P.; Sitter, H.

Razeghi, M. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physical concepts of materials for novel optoelectronic device applications. Vol. 1: Materials growth and characterization
Bellingham/Wash.: SPIE, 1991 (SPIE Proceedings Series 1361)
ISBN: 0-8194-0422-5
S.943-953 : Abb.,Tab.,Lit.
International Conference on Physical Concepts of Materials for Novel Optoelectronic Device Applications <1990, Aachen>
Fraunhofer IAF ()
luminescence; Lumineszenz; MBE; p-Dotierung; p-type doping; photocurrent; Photoleitung; ZnSe

Luminescense and photoconductivity measurements were performed on MBE grown ZnSe layers with various arsenic concentrations. Two shallow acceptor levels with energies of 125 meV and 260 meV were found. Increasing the As content in order to increase the number of shallow acceptor states resulted in highly compensated samples. For Li the acceptor binding energy was found to be 113 meV. Also in the case of Li a higher doping concentration did not augment the shallow levels. Electrical characterization of the Li doped samples was done by C-V and I-V measurements. The films were found to be p-type.