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Title
Einrichtung zum plasmagestuetzten Elektronenstrahl- Hochratebedampfen
Date Issued
1993
Author(s)
Neumann, M.
Schiller, S.
Morgner, H.
Patent No
1992-4235199
Abstract
Coating properties enhanced by using plasma in vacuum deposition, in particular in the sputtering process, are known. Much higher coating rates can be achieved during deposition leading, however, at high plasma densities, to strong scattering of the electron beam, thus reducing power density. According to the invention, a plasma source, preferably a hollow-cathode arc plasma source, is placed in the direct vicinity of the substrate. A device generating a magnetic field is placed between the vaporizer and the substrate in such a way that the area of high plasma density is separated from the vaporizer and the electron beam by the magnetic field. The fringing field lines of this magnetic field extend along an arc to the substrate.
Language
de
Patenprio
DE 1992-4235199 A: 19921019