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1992
Journal Article
Titel
Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Alternative
Effiziente Hochfrequenz-Direktmodulation von p-dotierten In0.35Ga0.65As/GaAs Multiquantum-Well-Lasern
Abstract
The authors demonstrate p-type modulation-doped strained-layer Insub0.35Gasub0.65As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3 x 200 My square meter mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.
Author(s)