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Effects of ion bombardment on the nucleation and growth of diamond films

: Jiang, X.; Klages, C.-P.; Zhang, W.J.


Physical Review. B 58 (1998), Nr.11, S.7064-7075
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Fraunhofer IST ()

The influence of ion bombardement on the nucleation and growth of diamond films by microwave plasma chemical vapor deposition (CVD) has been investigated The following findings were obtained. (i) Modification of surface diffusion by a substrate bias voltage was demonstrated by the measurement of the first-nearest-neighbor distances. The satisfactory agreement of the necleation rate with a kinetic model describing the formation of actives sites, germs, and nuclei was computer-simulated using crystal-size-distribution data under consideration of a linear growth mechanism. (ii) A dependence of growth direction of diamond grains upon the orientation of ion bombardment was observed using an atomic force microscopic analysis. (iii) Using a combination of scanning electron microscopy and transmission electron microscopy, slight misorientations of crystallites, homoepitaxially grown on (001) diamond faces parallel to the substates, were found and analyzed.