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Effect of deposition temperature of arsenic implanted poly-Si-on-insulator on grain size and residual stress

: Takai, M.; Kato, K.; Namba, S.; Pfannenmüller, U.; Ryssel, H.


Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 55 (1991), S.870-872 : Abb.,Tab.,Lit.
ISSN: 0168-583X
Fraunhofer IIS B ( IISB) ()
ion implantation; polysilicon; semiconductor technology

Poly-Si layers were deposited on thermal oxides of Si at various temperatures from 560 to 700 degree C. Arsenic was implanted at 100 keV to a dose of 1 X 10high16 cmhighminus2 in poly-Si layers, followed by annealing at 1OOOdegreeC. The grain size was found to range from 10 to 220 nm for deposition temperatures from 620 to 700degreeC. Implantation, followed by annealing, resulted in grain sizes of 200-250 nm independent of deposition temperature. An optimum deposition temperature range for poly-Si layers was found by Raman measurement to be 660-680 degree C, in which arsenic-implanted layers have residual tensile stresses of 0.75-3.0 kbar after annealing at 1000degreeC for 20 min.