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Dual bridge 6 Gsample/s track and hold circuit in AlGaAs/GaAs/AlGaAs HEMT technology

6 Gsample/s Folge-Halte-Schaltkreis mit Doppelbrücke in AlGaAs/GaAs/AlGaAs HEMT-Technologie
: Bushehri, E.; Thiede, A.; Staroselsky, V.; Timochenkov, V.; Lienhart, H.; Bratov, V.; Jakobus, T.


Electronics Letters 34 (1998), Nr.10, S.934-935 : Ill., Lit.
ISSN: 0013-5194
Fraunhofer IAF ()
Abtast-Halte-Schaltung; analog-digital conversion; Analog-Digital-Umsetzung; Folge-Halte-Schaltkreis; GaAs HEMT; high speed electronic; Hochgeschwindigkeitselektronik; sample and hold; track and hold

A T&H circuit with a sampling rate of 6Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective sampling rate with an insignificant increase in area compared to the previously reported solutions.