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Dry etching of Hg(1-x)Cd(x)Te using CH4/H2/Ar/N2 electron cyclotron resonance plasmas

Trockenätzen von Hg(1-x)Cd(x)Te in Elektron-Zyklotron-Resonanz-Plasmen mit CH4/H2/Ar/N2 als Prozessgase
: Keller, R.C.; Seelmann Eggebert, M.; Richter, H.J.


Journal of Electronic Materials 25 (1996), S.1270-1275
ISSN: 0361-5235
ISSN: 1543-186X
Fraunhofer IAF ()
dry etching; ECR; ECR-Plasma; HgCdTe; Trockenätzen

An approach is presented which eliminates the problems caused by hydrocarbon polymer deposition during etching Hg(1-x)Cd(x)Te with CH4/H2 based plasmas. We find that the addition of N2 to the plasma inhibits polymer deposition in the chamber and on the sample. We speculate that atomic nitrogen formed from N2 in the plasma has several beneficial effects: the elimination of polymer precursors, the reduction of the atomic hydrogen concentration, and a potential increase of methyl radical concentration. Evidence for the reaction between the nitrogen and the polymer precursors is presented. It is also demonstrated that the addition of N2 to CH4/H2 based electron cyclotron resonance (ECR) plasmas used to etch HgCdTe eliminates the roughness normally formed during etching and results in a steadier etch rate.