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Dry etching of GaN at low pressure

Trockenätzen von GaN bei niedriegen Drücken
 
: Pletschen, W.; Niebuhr, R.; Bachem, K.H.

Ren, F.; Pearton, S.J.; Buckley, D.N.; Chi, G.C.; Daele, P. van; Damijoh, T.; Schuermeyer, F.:
Symposium on wide bandgap semiconductors and devices '95. Porceedings. Vol. 95-21
1995
S.241-246
Symposium on wide bandgap semiconductors and devices <1995, Chicago>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
chemical vapour deposition; dry etching; GaN; MOCVD; Plasmaätzen; RIE

Abstract
The dry etch characteristics of GaN in RF generated CCl2F2 discharges has been studied as function of pressure, flow rate and self bias potential. In contrast to conventional Ga-A semiconductors (A=As, P, Sb) partically no etching is observed at pressures above 8 microbar which are commonly used for reactive ion etching (RIE). However, notable etch rates of up to 130 nm/min are obtained in the pressure range 1-2 microbar. Furthermore, the etch rates increase with self bias potential for both, pure plasmas and CCl2F2/Ar mixtures. The etch rates attained for the mixture are always smaller than for the pure gas even if non-optimized conditions were used for the pure plasma.

: http://publica.fraunhofer.de/dokumente/PX-10252.html