Dotierverfahren zur Herstellung von Homouebergaengen in Halbleitersubstraten
Date Issued
2002
Author(s)
Schindler, R.
Patent No
1995-19534574
Abstract
The method involves generating dopants into the substrate by diffusion. The outer substrate surface is aligned a light source, whose emission spectrum contains UV components. Between the substrate to be doped and the light source is interposed a mask. In dependence on the sections to be doped with identical dopant concentration, the mask contains different thickness regions. For the diffusion doping of the semiconductor substrate the mask surface is irradiated by the light source. Pref. dopant atoms are supplied between the mask and substrate. USE/ADVANTAGE - For solar cell etc. manufacture, using new RTP technique, in single manufacturing step.