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Doping of SiC by implantation of Boron and Aluminum

Dotierung von SiC durch Implantation von Bor und Aluminium
: Troffer, T.; Schadt, M.; Frank, T.; Itoh, H.; Pensl, G.; Heindl, J.; Strunk, H.P.; Maier, M.


Physica status solidi. A 162 (1997), S.277-298
ISSN: 0031-8965
ISSN: 1862-6300
Fraunhofer IAF ()
deep center; implantation; SiC; tiefe Störstelle

Experimental studies on aluminum (Al) and boron (B) implantation in 4H/6H SiC are reported; the implantation is conducted at room temperature or elevated temperatures (500 to 700 degrees C). Both Al and B act as "shallow" acceptors in SiC. The ionization energy of these acceptors, the hole mobility and the compensation in the implanted layers are obtained from Hall effect investigations. The degree of electrical activity of implanted Al/B atoms is determined as a function of the annealing temperature. Energetically deep centers introduced by the Al+/B+ implantation are investigated. The redistribution of implanted Al/B atoms subsequent to anneals and extended lattice defects are monitored. The generation of the B-related D-center is studied by coimplantation of Si/B and C/B, respectively.