Dopant incorporation in delta-doped GaAs layers studied by local vibrational mode spectroscopy

Raman scattering by local vibrational modes (LVM) is demonstrated to allow a direct assessment of Si or Be incorporation in single delta-doped GaAs layers. Placing the Si doping spike at different depths underneath the sample surface a strongly asymmetric Si sub Ga depth profile, probably due to segregation, is obtained by this Raman scattering method. In addition electronic Raman scattering data are reported which also indicate a considerable broadening of the doping spike.