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DLC thin film growth under energetic particle bombardment

A comparison between PLD and r.f.-bias enhanced PLD

Pustovoy, V.I. ; General Physics Institute, Moscow; Russian Center of Laser Technology and Materials; Univ. of Limoges; Centre National de la Recherche Scientifique -CNRS-, Paris:
ALT '97. International Conference on Laser Surface Processing
Bellingham, Wash.: SPIE, 1998 (SPIE Proceedings Series 3404)
ISBN: 0-8194-2855-8
S.84-90 : Ill., Lit.
International Conference on Laser Surface Processing (ALT) <1997, Limoges>
Fraunhofer ILT ()
diamond-like carbon; ion assisted growth; pulsed laser deposition; raman spectroscopy

Pulsed laser deposition (PLD) with KrF-excimer laser radiation (lambda = 248 nm, tau = 25 ns) is used to grow thin films Of diamond-like carbon (DLC) on Si substrates by material removal from a graphite target in vacuum (10(exp -5)-10(exp -4)mbar)or in processing gas atmospheres (He, Ne, Ar, Kr, p about 10(exp -2)mbar). Additional ion bombardment is performed by extracting inert gas ions from a low pressure r.f. gas discharge which is ignited in the deposition chamber. Raman spectroscopy reveals that the sp3-content of the MC films depends on the fluence of the laser radiation on the target, the substrate temperature and processing gas pressure. Especially the applied laser fluence and the inert gas pressure strongly influence the energy of the film-forming particles and therefore the relative amounts of sp2 and sp3 bonds in the films. Using additional ion bombardment from the low pressure gas discharge leads to more nanoclustered films in the case of higher ion masses due to a more ef fective defect creation. However, the films are predominantly sp2-bonded, caused by substrate heating due to dissipation of electric energy at the substrate electrode.