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2009
Journal Article
Titel
Carrier mass measurements in degenerate indium nitride
Alternative
Messungen von Masse der Ladungsträger in entartetem Indiumnitrid
Abstract
We present photoluminescence measurements under intense magnetic fields (B up to 30 T) in n-doped indium nitride samples with carrier concentration ranging from about 7.5x10(17) cm(-3) to 5x10(18) cm(-3). The observation of transitions involving several Landau levels permits to determine the carrier-reduced mass mu around the Gamma point. Depending on the carrier concentration, we find mu ranging between 0.093m(0) and 0.107m(0) (m(0) is the electron mass in vacuum). This finding poses a lower limit to the electron effective mass, whose unexpectedly large value (m(e)>= 0.093m(0)) indicates that the sources of n doping in InN perturb strongly the crystal conduction band near its minimum.
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