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Through silicon vias in micro-electromechanical systems

: Warnat, S.; Ecke, R.; Marenco, N.; Gruenzig, S.; Reinert, W.; Lange, P.


Vengallatore, S. ; Materials Research Society -MRS-:
Microelectromechanical systems - materials and devices II : Symposium held December 1 - 2, 2008, Boston, Massachusetts, U.S.A.; Symposium GG, "Microelectromechanical Systems - Materials and Devices II" which was held ... at the 2008 MRS fall meeting in Boston, Massachusetts
Warrendale, Pa.: MRS, 2009 (Materials Research Society Symposium Proceedings 1139)
ISBN: 978-1-60511-111-7
Symposium GG "Microelectromechanical Systems - Materials and Devices" <2, 2008, Boston/Mass.>
Materials Research Society (Fall Meeting) <2008, Boston/Mass.>
Fraunhofer ISIT ()

Through silicon vias (TSV) are widely discussed for 3D integration in CMOS devices to pursue the aggressive scaling of the historical Moore's law. Micro-electro mechanical systems (MEMS) can take benefit from this technology in order to combine the MEMS with an integrated circuit (IC) or to enhance the robustness of MEMS. The technological aspects of TSV with regard to the application for MEMS will be introduced. A typical pad structure of such a system is taken to evaluate essential process steps like wafer thinning, TSV hole formation and film deposition.