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Experimental observation of FIB induced lateral damage on silicon samples

: Spoldi, G.; Beuer, S.; Rommel, M.; Yanev, V.; Bauer, A.J.; Ryssel, H.

Postprint urn:nbn:de:0011-n-956788 (224 KByte PDF)
MD5 Fingerprint: 0b3a199648c0d86c9fb7097bba6478c7
Erstellt am: 26.8.2010

Raptis, I.:
34th International Conference on Micro- and Nano-Engineering, MNE 2008 : September 15 - 18, 2008, Athens, Greece
Amsterdam: Elsevier, 2009 (Microelectronic engineering 86.2009, Nr.4-6)
ISSN: 0167-9317
International Conference on Micro- and Nano-Engineering (MNE) <34, 2008, Athens>
Konferenzbeitrag, Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
focused ion beam (FIB); ion implantation damage; scanning capacitance microscopy; scanning spreading resistance microscopy

Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) were used to analyze focused ion beam (FIB) induced lateral damage around milled structures on silicon. For this purpose, circular shaped structures were realized, and the influence of the implanted Ga dose (ranging from 1015 to 1017 1/cm²) and of the patterned area dimension (diameters ranging from 1 to 4 µm) on the damage were examined. It is shown that the extension of the lateral damage around FIB milled structures is much larger than the area of the purposely irradiated regions (up to a factor of 5) and increases with both, Ga dose and pattern diameter. Besides, the unique capability of SCM and SSRM techniques for the detection of FIB induced damage is demonstrated. In particular, it is shown that their high sensitivity to low densities of defects allows detecting larger damaged areas compared to Atomic Force Microscopy (AFM) topography maps.