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Correlation of microscopic and macroscopic electrical characteristics of high-k ZrSixO2-x thin films using tunneling atomic force microscopy

: Weinreich, W.; Wilde, L.; Kücher, P.; Lemberger, M.; Yanev, V.; Rommel, M.; Bauer, A.J.; Erben, E.; Heitmann, J.; Schröder, U.; Oberbeck, L.


Müssig, H.-J.:
15th Workshop on Dielectrics in Microelectronics, WoDiM 2008. Papers : 23 - 25 June 2008, Bad Saarow (Berlin)
New York, N.Y.: AIP Press, 2009 (Journal of vacuum science and technology. B, microelectronics and nanometers 27.2009, Nr.1)
ISBN: 978-0-9823012-1-0
ISSN: 1071-1023
Workshop on Dielectrics in Microelectronics (WoDiM) <15, 2008, Berlin>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer CNT ()
Fraunhofer IISB ()
tunneling atomic force microscopy (TUNA); high-k dielectric; charge trapping; GIXRD; atomic force microscopy; high-k ZrSixO2-x

Tunneling atomic force microscopy \'01TUNA\'02 is used to identify leakage current characteristics in SiO2 doped ZrO2 thin films within the nanometer scale. TUNA current maps and local TUNA I-V curves provide similar tendencies such as conventional macroscopic I-V curves concerning the dependence of leakage current on thickness and doping level. However, microscopic data additionally visualize the influence of minimal deviations in composition or morphology on the electrical film homogeneity not observable by macroscopic techniques. Therefore, optimization of the SiO2 dopant concentration in ZrO2 is possible. Additionally, information regarding the nonuniformity of charge trapping can be obtained out of local TUNA I-V curves implying the broad potential of TUNA.