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Electrical insulation properties of sputter-deposited SiO2, Si3N4 and Al2O3 films at room temperature and 400 degrees C

 
: Bartzsch, H.; Glöß, D.; Frach, P.; Gittner, M.; Schultheiß, E.; Brode, W.; Hartung, J.

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Physica status solidi. A 206 (2009), Nr.3, S.514-519
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Workshop "Engineering of Functional Interfaces" (EnFi) <2008, Jülich>
Englisch
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer FEP ()
Sputtern; sputter deposition

Abstract
In this paper the breakdown field strength and resistivity of sputter-deposited Al2O3, SiO2 and Si3N4 layers are investigated in the temperature range between room temperature and 400 degrees C. All the investigated layers showed excellent insulation properties, even at elevated sample temperature. One example of industrial application is the deposition of electrical insulation layers onto the membranes of pressure sensors using cluster type sputter equipment.

: http://publica.fraunhofer.de/dokumente/N-93851.html