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Stretched-exponential increase in the open-circuit voltage induced by thermal annealing of amorphous silicon-carbide heterojunction solar cells

: Pysch, D.; Ziegler, J.; Becker, J.P.; Suwito, D.; Janz, S.; Glunz, S.W.; Hermle, M.


Applied Physics Letters 94 (2009), Nr.9, Art. 093510, 3 S.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer ISE ()

In this letter, the annealing behavior of the open-circuit voltage improvement of n-doped amorphous silicon-carbide heterojunction solar cells is investigated in detail. We present our results of a significant open-circuit voltage improvement of more than 100 mV up to a maximum value of 675.5 mV triggered by thermal annealing on a hotplate. The observed open-circuit voltage behavior can be described very well by a stretched-exponential function, which in general describes relaxation rates in complex systems. Therefore, we suggest a diffusion of weakly bonded hydrogen, activated by the annealing, which saturates dangling bonds in the amorphous layer itself and at the heterojunction interface, to be responsible for the strong V-oc improvement.