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Mechanical characterization and micro structure diagnostics of glass frit bonded interfaces

: Boettge, B.; Dresbach, C.; Graff, A.; Petzold, M.; Bagdahn, J.


Suga, T. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Semiconductor Wafer Bonding 10. Science, Technology, and Applications : Tenth International Symposium on Semiconductor Wafer Bonding; Honolulu, Hawaii, on October 14-16, 2008
Pennington: Electrochemical Society, 2008 (ECS transactions 16,8)
ISBN: 978-1-56677-654-7
ISBN: 978-1-60768-007-9
ISSN: 1938-5862
International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications <10, 2008, Honolulu/Hawaii>
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) <2008, Honolulu/Hawaii>
Electrochemical Society (Meeting) <214, 2008, Honolulu/Hawaii>
Electrochemical Society of Japan (Fall Meeting) <2008, Honolulu/Hawaii>
Fraunhofer IWM ()
wafer bonding; seal glass bonding; strength; lead precipitation; barrier formation

In this paper, results of mechanical strength investigations for glass frit bonded components using tensile and micro chevron testing are presented. Specific attention is given to the formation of lead precipitates close to the glass-silicon interface which affects the strength properties and form reliability risks. Results of the accompanying SEM and TEM investigations suggest that the lead precipitation can be understood in terms of a redox reaction involving the oxidation of the Si wafer and can be reduced by appropriate intermediate layers forming a barrier between glass and silicon.