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III-V and III-Nitride engineered heterostructures: Wafer bonding, ion slicing and more

: Moutanabbir, O.; Christiansen, S.; Senz, S.; Scholz, R.; Petzold, M.; Gösele, U.


Suga, T. ; Electrochemical Society -ECS-, Electronics and Photonics Division:
Semiconductor Wafer Bonding 10. Science, Technology, and Applications : Tenth International Symposium on Semiconductor Wafer Bonding; Honolulu, Hawaii, on October 14-16, 2008
Pennington: Electrochemical Society, 2008 (ECS transactions 16,8)
ISBN: 978-1-56677-654-7
ISBN: 978-1-60768-007-9
ISSN: 1938-5862
International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications <10, 2008, Honolulu/Hawaii>
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) <2008, Honolulu/Hawaii>
Electrochemical Society (Meeting) <214, 2008, Honolulu/Hawaii>
Electrochemical Society of Japan (Fall Meeting) <2008, Honolulu/Hawaii>
Fraunhofer IWM ()
wafer bonding; ion slicing; layer transfer; heterostructures; InP; GaN; sapphire

Wafer bonding in combination with ion slicing emerges as a nonpareil strategy by which bulk quality thin layers can be transferred onto different host materials. In the first part of this paper a successful application of this process to transfer 4-inch InP layer onto Si wafer is demonstrated. The use of SiO2 interlayer makes the fabricated heterostructures compatible with high temperature processes. In the second section we address the applicability of this process for 2-inch freestanding GaN wafers which exhibit a strong post-implantation bowing making any bonding exceedingly difficult. We describe the origin of this bow enhancement and present a novel strategy to manipulate it. Based on our approach a successful bonding of 2-inch free-standing GaN into sapphire handle wafers is achieved . Finally, by using a variety of experimental techniques, we explore the atomic processes and structural transformations involved in H ion-induced GaN splitting. A plausible mechanistic picture is presented.