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2009
Journal Article
Titel
Etch performance of Ar/N2/F2 for CVD/ALD chamber clean
Abstract
A new F-2 gas mixture was evaluated as a substitute for conventional cleaning gases such as, NF3, C2F6, and CF4, in a CVD chamber. The new mixture was compatible with the equipment used and improvement was seen in the etch rate as well as a reduction in the amount of gas needed to complete the clean.