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Etch performance of Ar/N2/F2 for CVD/ALD chamber clean

 
: Riva, M.; Pittroff, M.; Schware, T.; Oshinowo, J.; Wieland, R.

Solid state technology 52 (2009), Nr.2, S.20-24
ISSN: 0038-111X
Englisch
Zeitschriftenaufsatz
Fraunhofer IZM ()

Abstract
A new F-2 gas mixture was evaluated as a substitute for conventional cleaning gases such as, NF3, C2F6, and CF4, in a CVD chamber. The new mixture was compatible with the equipment used and improvement was seen in the etch rate as well as a reduction in the amount of gas needed to complete the clean.

: http://publica.fraunhofer.de/dokumente/N-93094.html