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On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets

Über den Einfluß des lokalen elektronischen Bremsvermögens auf die Ionenimplantationsprofile in nichtkristallinnen Materiallien
 
: Burenkov, A.; Mu, Y.; Ryssel, H.

Tsamis, C.:
Simulation of Semiconductor Processes and Devices. SISPAD 2001 : Proceedings of the International Conference
Wien: Springer, 2001
ISBN: 3-211-83708-6
S.70-73
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <6, 2001, Athen>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
ion implantation; electronic stopping; Monte Carlo

Abstract
Local electronic stopping was taken into account when simulating the ion implantation profiles in non-crystalline materials with the Monte-Carlo method. The effect of the local electronic stopping is especially remarkable for heavy ions at elevated implantation energies, e. g. arsenic implantation into silicon or photoresist at an energy of about 1 MeV. The strong impact parameter dependence of the local electronic stopping leads to a significant widening of the ion implantation profiles. The account of the local electronic stopping during the simulation of the ion penetration into non-crystalline materials results in a better agreement with the measurements of the ion implantation profiles. Comparison of the simulations with experiments is presented for arsenic and phosphorus implantation into photoresist.

: http://publica.fraunhofer.de/dokumente/N-9160.html