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Investigations on the recombination activity of grain boundaries in MC silicon

: Zuschlag, A.; Micard, G.; Junge, J.; Käs, M.; Seren, S.; Hahn, G.; Coletti, G.; Jia, G.; Seifert, W.


IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.4 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 978-1-4244-1641-7
ISBN: 1-4244-1640-X
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
Fraunhofer ISE ()

This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion length and surface recombination velocity at grain boundaries. Both can be extracted in principle from Laser- and Electron Beam Induced Current measurements (LBIC and EBIC). Multicrystalline floatzone (mc FZ) silicon with different grain sizes was processed to solar cell and characterized by LBIC and EBIC. A theoretical model is used which can be applied to measured LBIC or EBIC profiles in order to obtain values for the effective intra-grain diffusion length and the recombination velocity at grain boundaries. The obtained results are very useful for cost effective small grained mc silicon materials, e.g. Ribbon Growth on Substrate (RGS).