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Spatially resolved silicon solar cell characterization using infrared imaging methods

 
: Kasemann, M.; Kwapil, M.; Schubert, M.C.; Habenicht, H.; Walter, B.; The, M.; Kontermann, S.; Rein, S.; Breitenstein, O.; Bauer, J.; Lotnyk, A.; Michl, B.; Nagel, H.; Schütt, A.; Carstensen, J.; Föll, H.; Trupke, T.; Augarten, Y.; Kampwerth, H.; Bardos, R.A.; Pingel, S.; Berghold, J.; Warta, W.; Glunz, S.W.

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Postprint urn:nbn:de:0011-n-898245 (861 KByte PDF)
MD5 Fingerprint: c5697bef0320fee5e85a7a1f7ae4eff7
Erstellt am: 21.9.2012


IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.2 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 978-1-4244-1641-7
ISBN: 1-4244-1640-X
S.587-593
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Abstract
We present a comprehensive overview over infrared imaging techniques for (electrical) silicon solar cell characterization. Recent method development in local series resistance imaging is reviewed in more detail and new results in local breakdown investigations on multicrystalline (mc) silicon solar cells are reported. We observe local junction breakdown sites on industrial mc-cells at reverse voltages as low as -7V and breakdown in great areas of the cell at voltages around -14V. As these breakdown sites (as well as local shunts) can cause hot spots which can damage the cell and the module, we also present an ultra-fast, simple and quantitative method for hot-spot detection. Typical measurement times in the order of 10 milliseconds are achieved.

: http://publica.fraunhofer.de/dokumente/N-89824.html