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Optically pumped GaSb-based VECSELs

GaSb-basierende optisch gepumpte VECSEL
: Schulz, N.; Rattunde, M.; Rösener, B.; Manz, C.; Köhler, K.; Wagner, J.


Murdin, B.N.:
Narrow gap semiconductors 2007 : Proceedings of the 13th international conference, 8-12 July, 2007, Guildford, UK
Berlin: Springer, 2008 (Springer Proceedings in Physics 119)
ISBN: 978-1-4020-8424-9
ISBN: 1-4020-8424-2
International Conference on Narrow Gap Semiconductors (NGS) <13, 2007, Guildford>
Fraunhofer IAF ()
semiconductor; disk laser; Halbleiter-Scheibenlaser; VECSEL

We report on the current status of high-output-power optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) with emission wavelengths of around 2.3 µm. The (AlGaIn)(AsSb) materials system used and the requirements for the VECSEL structure design and growth are discussed. Furthermore, two distinctive optical pumping concepts, barrier pumping at pump wavelengths around 1 µm, and "in-well" pumping at 1.96 µm are compared. For the barrier pumped VECSEL a cw output power of 1.5 W has been achieved with 10 W of pump power and at a heat sink temperature of -15°C. The in-well pumped VECSEL reached 3.2 W of output power at -15°C for an absorbed pump power of only 13.5 W, at a significantly increased differential power efficiency compared to the barrier pumped VECSEL (25% instead of 16%).