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Epitaxy of emitters on P- and N-type substrates for crystalline silicon solar cells

: Schmich, E.; Reber, S.; Hees, J.; Lautenschlager, H.; Schillinger, N.; Willeke, G.

Volltext urn:nbn:de:0011-n-874883 (111 KByte PDF)
MD5 Fingerprint: ae4c0e5ae0ecee2bb77fce73f4c6c962
Erstellt am: 29.9.2012

IEEE Electron Devices Society:
IEEE 4th World Conference on Photovoltaic Energy Conversion 2006. Vol.3 : Waikoloa, Hawaii, 7 - 12 May 2006
Piscataway, NJ: IEEE Operations Center, 2006
ISBN: 1-4244-0016-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <4, 2006, Waikoloa/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

This paper suggests epitaxy of silicon for emitter formation by high temperature CVD as an alternative to conventional processing for standard silicon wafer solar cells. Epitaxy could provide an alternative method to create an adjustable emitter shape at a short deposition time. Results of solar cells of phosphorous-doped epitaxial layers on p-type silicon wafers are presented. Different measurement methods characterising the doping profile and level were applied to such emitters. Until now no standard diffusion process has been found to create boron-doped emitters for n-type silicon wafers. Epitaxially deposited p-type emitters might open the market for n-type crystalline silicon solar cells. This paper presents preliminary and promising results of n-type solar cells with a boron-doped epitaxial emitter.