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Redistribution of recombination active defects and trapping effects in multicrystalline silicon after wet thermal oxidation

: Riepe, S.; Schultz, O.; Warta, W.

Volltext urn:nbn:de:0011-n-874864 (835 KByte PDF)
MD5 Fingerprint: ac76510ec8d686239c085bb39a276717
Erstellt am: 3.10.2012

IEEE Electron Devices Society:
IEEE 4th World Conference on Photovoltaic Energy Conversion 2006. Vol.1 : Waikoloa, Hawaii, 7 - 12 May 2006
Piscataway, NJ: IEEE Operations Center, 2006
ISBN: 1-4244-0017-1 (Print)
ISBN: 1-4244-0016-3 (Online)
World Conference on Photovoltaic Energy Conversion (WCPEC) <4, 2006, Waikoloa/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this work we characterised recombination active defects in standard multicrystalline silicon block material by investigating the effect of a wet thermal oxidation step at 800 degC with fast temperature ramps on the effective lifetimes measured by the CDI and QSSPC methods. The average lifetime was significantly decreased by the oxidation step. An increase in the concentration of interstitial iron as well as an increase in the concentration of trapping centres after the oxidation step was observed. A detailed investigation revealed an increase in the recombination activity of grain boundaries. Modeling of measured carrier density profiles indicates that iron dissolves from precipitates in grain boundaries and diffuses into the grains during the process. It was found that iron represents a major part of the active defect concentration in the investigated multicrystalline material after the applied oxidation process.