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Multiple-throw millimeter-wave FET switches for frequencies from 60 up to 120 GHz

FET-basierte Millimeterwellen-Mehrfachschalter für Frequenzen von 60 bis zu 120 Ghz
: Kallfass, I.; Diebold, S.; Massler, H.; Koch, S.; Seelmann-Eggebert, M.; Leuther, A.

38th European Microwave Conference, EuMC 2008. CD-ROM : European Microwave Week, EuMW 2008, Amsterdam, 28-30 October 2008
London: Horizon House, 2008
European Microwave Conference (EuMC) <38, 2008, Amsterdam>
European Microwave Week (EuMW) <11, 2008, Amsterdam>
Fraunhofer IAF ()
GaAs; 60 GHz; D-band; W-Band; diversity; Diversität; millimeter-wave switch; Millimeterwellenschalter; MHEMT; monolithic microwave integrated circuit; monolithisch integrierte Mikrowellenschaltung; monolithic millimeterwave integrated circuit; monolithisch integrierte Millimeterwellenschaltung; MMIC

This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication fontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60 and 94 GHz, respectively. Rivalled only by PIN diode switches, an insertion loss of <2 dB is demonstrated up to 120 GHz. Shorted stubs are used to compensate for parasitic FET capacitance and allow for matching. Linearity data is presented for 60 and 94 GHz SPDT switches. A comprehensive comparison with state-of-the-art planar SPDT switches is included. A 2:6 switch network for multi-antenna transceivers achieves <4 dB insertion loss at 60 GHz.