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InP DHBT-based ICs for 100 Gbit/s data transmission

InP-DHBT-basierende integrierte Schaltungen für 100 Gbit/s-Datenübertragung
: Driad, R.; Makon, R.E.; Hurm, V.; Schneider, K.; Benkhelifa, F.; Lösch, R.; Rosenzweig, J.


IEEE Lasers and Electro-Optics Society; IEEE Electron Devices Society:
20th International Conference on Indium Phosphide and Related Materials, IPRM 2008 : 25-29 May 2008, Versailles, France
New York, NY: IEEE, 2008
ISBN: 978-1-4244-2258-6
4 S.
International Conference on Indium Phosphide and Related Materials (IPRM) <20, 2008, Versailles>
Fraunhofer IAF ()
InP; InP-DHBT; 100 Gbit/s; distributed amplifier; multiplexer

This paper reports state-of-the-art mixed signal ICs, including a distributed amplifier and a multiplexer-core intended for use in 100 Gbit/s optical communication systems (Ethernet). Using a manufacturable InP DHBT technology, exhibiting current gains of > 80 and cut-off frequencies (f(ind T) and f(ind max)) of > 300 GHz, the broadband amplifier achieved a gain of 21 dB and a 3-dB bandwidth of 95 GHz (GxBW > 1 THz), whereas, the 2:1 multiplexer-core has been tested at data rates up to 138 Gbit/s.