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Reducing of ion beam induced surface damaging using »low voltage«

 
: Salzer, R.; Simon, M.; Graff, A.; Altmann, F.; Pastewka, L.; Moseler, M.

:

Luysberg, M.:
EMC 2008, 14th European Microscopy Congress. Vol.1: Instrumentation and Methods : 1-5 September 2008, Aachen, Germany
Berlin: Springer, 2008
ISBN: 978-3-540-85154-7
ISBN: 978-3-540-85156-1
S.685-686
European Microscopy Congress (EMC) <14, 2008, Aachen>
Englisch
Konferenzbeitrag
Fraunhofer IWM ()
FIB preparation; low voltage; MD simulation

Abstract
It is of high interest to understand the FIB process in order to predict the amorphisation behaviour, sputter coefficients and their dependency on the crystallographic structure of different materials. But it is very time-consuming to estimate these material properties from experimental investigations because many steps are necessary to obtain one high resolution TEM sample. So the creation of a reliable simulation model of the FIB process is an important scientific issue. In this work the thickness of the amorphous layer against the acceleration voltage of the ion beam was investigated for silicon single crystals. Classical molecular dynamic simulations based on were used to calculate the FIB process to understand the kinetics of amorphisation. We did TEM investigations, to determine expe rimentally the thickness of the amorphous layer. As already used the low voltage polishing is a viable method to reduce amorphisation and enhance information yield in TEM investigations. It is shown that the calculations are comparable with the experimental results. The models used to simulate the FIB sputtering process giving a good, qualitative predication and are useful for further investigations.

: http://publica.fraunhofer.de/dokumente/N-85927.html