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GaInAs/ AlAsSb quantum cascade lasers: A new approach towards 3-to-5 µm semiconductor lasers

GaInAs/ AlAsSb Quantenkaskadenlaser: ein neuer Ansatz zu 3-bis-5 µm Halbleiterlasern
 
: Yang, Q.K.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Wagner, J.

:

Haug, R. ; Deutsche Physikalische Gesellschaft e.V. -DPG-, Bad Honnef:
Spring meeting of the Arbeitskreis Festkörperphysik of the Deutsche Physikalische Gesellschaft 2006 : General conference of the European Physical Society, Condensed Matter Division, 27-31.03.2006, Dresden
Berlin: Springer, 2008 (Advances in Solid State Physics 46)
ISBN: 978-3-540-38235-5
ISBN: 978-3-540-38234-8
S.223-237
Deutsche Physikalische Gesellschaft, Arbeitskreis Festkörperphysik (Spring Meeting) <2006, Dresden>
European Physical Society, Condensed Matter Division (General Conference) <21, 2006, Dresden>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaInAs/AlAsSb; quantum cascade laser; Quantenkaskadenlaser; 3-to-5 µm; 3-bis-5 µm

Abstract
At present GaInAs/AlInAs based quantum cascade (QC) lasers represent the state-of-the-art with respect to the short-wavelength (< 5 µm) performance of the QC laser concept. This performance, however, is intrinsically limited by the available conduction band offset of 0.5-0.7 eV, thus motivating research on materials combinations with larger band offsets, such as GaN/AlN and InAs/AlSb. A particularly attractive materials combination is GaInAs/AlAsSb grown lattice-matched on InP. It offers a gamma-point conduction band offset of about 1.6 eV, while the mature growth and processing technologies available for InP-based lasers can be used and the favorable properties of InP as a waveguide cladding material can be exploited. In this paper recent advances in GaInAs/AlAsSb QC laser research will be reviewed, leading to a maximum pulsed operating temperature of > 400 K for devices emitting at 4.6 µm and an impressive maximum peak output power of 8 W at 77 K (corresponding to a total power efficiency of 23 %) for a QC laser emtitting at 3.7 µm. Furthermore, current limitations of the GaInAs/AlAsSb QC laser concept and challenges for future research are discussed.

: http://publica.fraunhofer.de/dokumente/N-85676.html