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2008
Conference Paper
Titel
Broadband antireflective structures for the THz spectral range fabricated on high resistive float zone silicon
Abstract
Antireflective structures for a spectral range from 0.1-1.2 THz are applied to the surface of high resistive float zone silicon by deep reactive ion etching. Binary hexagonal and rectangular structures yield an increase in the pulse maximum of the electric field strength of about 20 percent for one structured surface,