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A 210 GHz dual-gate FET mixer MMIC with > 2 dB conversion gain, high LO-to-RF isolation, and low LO-drive requirements

Ein 210 GHz Dual-Gate FET Mischer MMIC mit >2 dB Konversionsgewinn, hoher LO-RF Isolation und niedriger LO-Treiberleistung
: Kallfass, I.; Massler, H.; Leuther, A.; Tessmann, A.; Schlechtweg, M.


IEEE microwave and wireless components letters 18 (2008), Nr.8, S.557-559
ISSN: 1051-8207
ISSN: 1531-1309
Fraunhofer IAF ()
G-Band; metamorphic high electron mobility transistor; metamorpher HEMT; millimeter-wave field effect transistor; Millimeterwellen-Frequenzumsetzung; FET; integrated circuit; millimeter wave FET integrated circuit; Millimeterwellen-Mischer; monolithic microwave integrated circuit; monolithisch integrierte Millimeterwellenschaltung

We demonstrate the first active mixer monolithic microwave integrated circuit (MMIC) with Positive conversion gain beyond 200 GHz. The presented dual-gate topology is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. Without any pre- or post-amplification, the down-conversion mixer achieves >2 dB conversion gain and >16 dB local oscillation to radio frequency (LO-to-RF) isolation at 210 GHz, outperforming state-of-the-art resistive MMIC mixers. The conversion gain becomes positive for LO power levels larger than 0 dBm, making the mixer suitable for being driven by an MMIC-based frequency doubler. A comparison to state-of-the-art G-band mixers is given.