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New developments in plasma enhanced chemical etching at atmospheric pressure for crystalline silicon wafer processing

Neue Entwicklungen im plasmaunterstützten chemischen Ätzen bei atmosphärischem Druck bei der Bearbeitung von Wafern aus kristallinem Silicium
 
: Lopez, E.; Beese, H.; Mäder, G.; Dani, I.; Hopfe, V.; Heintze, M.; Moeller, R.; Wanka, H.; Kirschmann, M.; Frenck, J.A. et al.

European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
S.1484-1487
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Englisch
Konferenzbeitrag
Fraunhofer IWS ()
atmosphärischer Druck; Ätzen; Ätzgeschwindigkeit; Einkristallsilicium; Fertigungsverfahren; FTIR-Spektroskopie; Kostensenkung; Plasma-CVD; Reaktoroptimierung; Silicium-Wafer; Solarzelle; Verfahrensoptimierung

Abstract
In standard production technology of crystalline silicon solar cells most of the etching steps are carried out by wet chemical processing. In an advanced in-line process sequence, there is a potential interest in dry etching as alternative to the current technology, especially when combined with similar process technologies, for example atmospheric pressure deposition techniques. Based on a linear extended DC arc with a working with of 150 mm for plasma activation, an innovative atmospheric pressure plasma etching technology was studied and optimized. In this contribution, an up-graded reactor design is presented with allows higher etch rates (higher wafer throughput) than previously reported. In-situ gas phase Fourier Transformed Infrared Spectroscopy (FTIR) has been carried out in order to estimate the utilization of the etch gas in the new reactor configuration. Rear side etching and edge isolation of 125x125 mm(exp 2) mono-crystalline silicon wafers have been carried out with NF3 as etch gas on wafers which were processed to solar cells under industrial conditions.
Entnommen aus TEMA

: http://publica.fraunhofer.de/dokumente/N-81767.html