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Etch-depth dependence of laser diodes using angular filtering by total reflection

Ätztiefenabhängigkeit von auf Winkelselektion durch Totalreflektion basierenden Laser Dioden
: Rogg, J.; Boucke, K.; Kelemen, M.T.; Rinner, F.; Pletschen, W.; Kiefer, R.; Walther, M.; Mikulla, M.; Poprawe, R.; Weimann, G.


IEEE Lasers and Electro-Optics Society:
LEOS 2001. The 14th Annual Meeting of the IEEE Lasers & Electro-Optics Society. Vol.1 : Hyatt Regency La Jolla, San Diego, CA. 2001 IEEE/LEOS annual meeting conference proceedings
Piscataway, NJ: IEEE, 2001
ISBN: 0-7803-7105-4
ISBN: 0-7803-7106-2
IEEE Lasers and Electro-Optics Society (Annual Meeting) <14, 2001, San Diego/Calif.>
Fraunhofer IAF ()
high brightness; hohe Brillianz; high-power diode laser; Hochleistungs-Diodenlaser; Z-Laser; InGaAs/AlGaAs; semiconductor laser diode; Halbleiterlaserdiode

High-brightness high-power laser diodes are gaining importance in a wide variety of applications. Especially for the direct use as a replacement of solid-state lasers, laser diodes with high output power and good beam quality are necessary. Recently we presented the realization of a new resonator concept for high brightness laser diodes, the so called "Z-laser". In this paper we present data on the optimization of the internal reflecting boundaries of these devices.