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Heat-spreading diamond films for GaN-based high-power transistor devices

Direktabscheidung von Diamant-Filmen als Wärmespreizer für GaN-Hochleistungstransistoren
 
: Seelmann-Eggebert, M.; Meisen, P.; Schaudel, F.; Kiodl, P.; Vescan, A.; Leier, H.

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Diamond and Related Materials 10 (2001), S.744-749
ISSN: 0925-9635
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
diamond film; Diamantfilm; Thermal simulation; thermische Simulation; GaN; FET; low temperature deposition; Niedertemperaturabscheidung; nucleation; Nukleation; device modeling; Metal Semiconductor Field-Effect Transistor (MESFET); processing

Abstract
We discuss the potential of heat-spreading films with respect to improving the performance of thermally limited high-power high-frequency GaN-FET devices and report on successful diamond deposition on GaN-FETs. Detailed conditions for process compatibility with GaN-FET technology are discussed and shown to be satisfied by the low-temperature deposition process developed.

: http://publica.fraunhofer.de/dokumente/N-8009.html